sot23 npn silicon planar medium power darlington transistors issue 3 ? august 1996 features * 60 volt v ceo * gain of 10k at i c =0.5 amp partmarking details ? FMMT38A ? 4j fmmt38b ? 5j fmmt38c ? 7j absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 10 v peak pulse current i cm 800 ma continuous collector current i c 300 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 80 v i c =10 a, i e =0 collector-emitter sustaining voltage v ceo(sus) 60 v i c =10ma, i b =0 emitter-base breakdown voltage v (br)ebo 10 v i e =10 a, i c =0 collector cut-off current i cbo 100 na v cb =60v, i e =0 emitter cut-off current i ebo 100 na v eb =8v, i c =0 collector-emitter saturation voltage v ce(sat) 1.25 v i c =800ma, i b =8ma* base-emitter turn-on voltage v be(on) 1.8 v i c =800ma, v ce =5v* static forward current transfer ratio FMMT38A h fe 500 1000 i c =100ma, v ce =5v* i c =500ma, v ce =5v* fmmt38b 2000 4000 i c =100ma, v ce =5v* i c =500ma, v ce =5v* fmmt38c 5000 10000 i c =100ma, v ce =5v* i c =500ma, v ce =5v* *measured under pulsed conditions. pulse width=300 s. duty cycle 2% spice parameter data is available upon request for this device FMMT38A fmmt38b fmmt38c c b e 0.0001 50 150 100 pulse width (seconds) 10 100 1 0.1 0.01 0.001 0 d=1 (d.c.) d=0.5 d=0.2 d=0.1 single pulse d=0.05 0.001 0.01 0.1 1 0.8 0.2 1.0 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e ( s a t ) - ( v o l t s ) i c - collector current (amps) v be(sat) v i c i c - collector current (amps) v be(on) v i c v b e - ( v o l t s ) v b e ( s a t ) - ( v o l t s ) 0.4 0.001 0.01 0.1 1 0 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 i c - collector current (amps) h fe v i c h f e - n o r m a l i s e d g a i n 10 1.0 0.5 2.0 1.5 v ce =5v i c /i b =100 10 0.6 0.001 0.01 0.1 1 10 i c /i b =100 1.0 0.5 2.0 1.5 0.001 0.01 0.1 1 10 v ce =5v -55c +25c +100c +175c -55c +25c +100c +175c -55c +25c +100c -55c +25c +100c +175c maximum transient thermal impedance thermal resistance (c/w) 100m 1s 100ms ic - collector current (a) dc 1m v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100us 1 10 100 10m 100m 1 FMMT38A fmmt38b fmmt38c 3 - 101 3 - 100
sot23 npn silicon planar medium power darlington transistors issue 3 ? august 1996 features * 60 volt v ceo * gain of 10k at i c =0.5 amp partmarking details ? FMMT38A ? 4j fmmt38b ? 5j fmmt38c ? 7j absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 10 v peak pulse current i cm 800 ma continuous collector current i c 300 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 80 v i c =10 a, i e =0 collector-emitter sustaining voltage v ceo(sus) 60 v i c =10ma, i b =0 emitter-base breakdown voltage v (br)ebo 10 v i e =10 a, i c =0 collector cut-off current i cbo 100 na v cb =60v, i e =0 emitter cut-off current i ebo 100 na v eb =8v, i c =0 collector-emitter saturation voltage v ce(sat) 1.25 v i c =800ma, i b =8ma* base-emitter turn-on voltage v be(on) 1.8 v i c =800ma, v ce =5v* static forward current transfer ratio FMMT38A h fe 500 1000 i c =100ma, v ce =5v* i c =500ma, v ce =5v* fmmt38b 2000 4000 i c =100ma, v ce =5v* i c =500ma, v ce =5v* fmmt38c 5000 10000 i c =100ma, v ce =5v* i c =500ma, v ce =5v* *measured under pulsed conditions. pulse width=300 s. duty cycle 2% spice parameter data is available upon request for this device FMMT38A fmmt38b fmmt38c c b e 0.0001 50 150 100 pulse width (seconds) 10 100 1 0.1 0.01 0.001 0 d=1 (d.c.) d=0.5 d=0.2 d=0.1 single pulse d=0.05 0.001 0.01 0.1 1 0.8 0.2 1.0 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e ( s a t ) - ( v o l t s ) i c - collector current (amps) v be(sat) v i c i c - collector current (amps) v be(on) v i c v b e - ( v o l t s ) v b e ( s a t ) - ( v o l t s ) 0.4 0.001 0.01 0.1 1 0 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 i c - collector current (amps) h fe v i c h f e - n o r m a l i s e d g a i n 10 1.0 0.5 2.0 1.5 v ce =5v i c /i b =100 10 0.6 0.001 0.01 0.1 1 10 i c /i b =100 1.0 0.5 2.0 1.5 0.001 0.01 0.1 1 10 v ce =5v -55c +25c +100c +175c -55c +25c +100c +175c -55c +25c +100c -55c +25c +100c +175c maximum transient thermal impedance thermal resistance (c/w) 100m 1s 100ms ic - collector current (a) dc 1m v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100us 1 10 100 10m 100m 1 FMMT38A fmmt38b fmmt38c 3 - 101 3 - 100
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